DocumentCode
268179
Title
Surface Off-Stoichiometry of CuInS 
Thin-Film Solar Cell Absorbers
Author
Bär, M. ; Klaer, J. ; FeÌlix, R. ; Barreau, N. ; Weinhardt, L. ; Wilks, R.G. ; Heske, C. ; Schock, H.-W.
Author_Institution
Solar Energy Div., Helmholtz-Zentrum Berlin fur Mater. und Energie GmbH, Berlin, Germany
Volume
3
Issue
2
fYear
2013
fDate
Apr-13
Firstpage
828
Lastpage
832
Abstract
In this paper, X-ray photoelectron and X-ray-excited Auger electron spectroscopy was used to investigate the chemical surface structure of CuInS2 thin-film solar cell absorbers. We find that the [In]/[Cu] surface composition can vary between 1.6 (± 0.4) and 3.7 (± 0.7), depending on relatively minor variations in the absorber formation process and/or whether additional wet-chemical treatments are performed. These variations are primarily due to differences in the Cu surface concentration. The corresponding change of the modified In Auger parameter is interpreted as being indicative of a change in the chemical environment of In as a function of Cu off-stoichiometry.
Keywords
Auger electron spectra; X-ray photoelectron spectra; chemical structure; copper compounds; indium compounds; semiconductor thin films; solar absorber-convertors; solar cells; stoichiometry; surface chemistry; surface composition; ternary semiconductors; thin film devices; Auger parameter; CuInS2; X-ray photoelectron spectroscopy; X-ray-excited Auger electron spectroscopy; absorber formation process; chemical environment; chemical surface structure; surface composition; surface concentration; surface off-stoichiometry; thin-film solar cell absorbers; wet-chemical treatments; Chemicals; Photonic band gap; Photovoltaic cells; Spectroscopy; Surface structures; Surface treatment; Water; Chalcopyrite thin-film solar cell; X-ray photoelectron spectroscopy; surface composition; wet-chemical treatment;
fLanguage
English
Journal_Title
Photovoltaics, IEEE Journal of
Publisher
ieee
ISSN
2156-3381
Type
jour
DOI
10.1109/JPHOTOV.2012.2228299
Filename
6380521
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