DocumentCode
2681792
Title
A full colour LCD addressed by poly Si TFTS fabricated at low temperature below 450 degrees C
Author
Yuki, Masahiro ; Masumo, K. ; Takafuji, S. ; Asakawa, T. ; Imajyo, N. ; Kunigita, M.
Author_Institution
Asahi Glass Electron Products Res. & Dev. Centre Co. Ltd., Yokohama, Japan
fYear
1988
fDate
4-6 Oct. 1988
Firstpage
220
Lastpage
221
Abstract
A process below 450 degrees C has been developed for poly-Si thin-film transistor (TFTs). The devices have higher mobility ( approximately 50 cm/sup 2//V-s) and higher reliability than a-Si TFTs. A 3.5-in. full-colour liquid-crystal display addressed by these poly-Si TFTs is described.<>
Keywords
MOS integrated circuits; driver circuits; elemental semiconductors; liquid crystal displays; semiconductor technology; silicon; thin film transistors; 3.5 inch; 450 degC; colour LCD; mobility; polycrystalline Si; reliability; Chromium; Costs; Crystallization; Filters; Glass; Liquid crystal displays; TV; Temperature; Thin film transistors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Display Research Conference, 1988., Conference Record of the 1988 International
Conference_Location
San Diego, CA, USA
Type
conf
DOI
10.1109/DISPL.1988.11315
Filename
11315
Link To Document