DocumentCode
2682177
Title
Electrical method on evaluation of power device chip´s welding quality
Author
She, Shuojie ; Gao, Guangbo ; Huang, Yueqiang ; Gandhi, Darshan ; Choudhry, Mahmood ; Lv, Changzhi
Author_Institution
Reliability Phys. Lab., Beijing Univ. of Technol., Beijing, China
fYear
2011
fDate
12-15 June 2011
Firstpage
99
Lastpage
102
Abstract
Power devices are widely used in household appliances and industrial products even in the space industry. Because of defects in the package, their electrical parameters might change. Some of them may even lead to irreparable damage on devices. This paper presents a new method for evaluation of the device chips´ welding quality, by means of analyzing thermal resistance and structure function of the power devices.
Keywords
electronics packaging; insulated gate bipolar transistors; power electronics; power semiconductor devices; quality control; thermal resistance; welding; household appliances; power device chips evaluation method; structure function; thermal resistance; welding quality; Electrical resistance measurement; Insulated gate bipolar transistors; Semiconductor device measurement; Temperature measurement; Thermal resistance; Welding; solder layer; structure function; thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability, Maintainability and Safety (ICRMS), 2011 9th International Conference on
Conference_Location
Guiyang
Print_ISBN
978-1-61284-667-5
Type
conf
DOI
10.1109/ICRMS.2011.5979242
Filename
5979242
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