• DocumentCode
    2682294
  • Title

    Preparation and dielectric properties of CaCu3Ti4O12-(NaBi)0.5Cu3Ti4O12 composites

  • Author

    Yu, Rong ; Chen, La ; Xue, Hao ; Xiong, Zhaoxian

  • Author_Institution
    Collage of Mater., Xiamen Univ., Xiamen, China
  • fYear
    2011
  • fDate
    25-28 Oct. 2011
  • Firstpage
    52
  • Lastpage
    55
  • Abstract
    The composites of CaCu3Ti4O12-x(NaBi)0.5Cu3Ti4O12, i.e. CCTO-xNBCTO, were prepared for x value from 0 to 0.1. Ultrahigh dielectric constant, ε =7×105, and dielectric loss, tanδ = 0.48, of the composites with x=0.05 were obtained. The relations between crystal structures with XRD spectra and dielectric properties with LCR measurement were investigated, in which. An internal barrier layer capacitance effect is used to explain the mechanism of such dielectric behavior. The frequency dependence of the dielectric constant of CCTO-NBCTO composites were measured from 20Hz to 1MHz, showing that the loss tangent apparently decreased with the increase of frequency. The temperature dependence of both the dielectric constant and loss tangent of the samples were also obtained. It was found that the dielectric properties was almost independent of temperature in the range from -20°C to 80°C, however, the loss tangent were increased dramatically with a further increase in temperature, above 80°C.
  • Keywords
    X-ray diffraction; bismuth compounds; calcium compounds; composite materials; copper compounds; crystal structure; dielectric losses; materials preparation; permittivity; sodium compounds; CaCu3Ti4O12-(NaBi)0.5Cu3Ti4O12; LCR measurement; X-ray diffraction; XRD; composite materials; crystal structure; dielectric constant; dielectric loss tangent; dielectric properties; frequency 20 Hz to 1 MHz; internal barrier layer capacitance effect; temperature -20 degC to 80 degC; Ceramics; Dielectric constant; Grain boundaries; Temperature; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Packaging Materials (APM), 2011 International Symposium on
  • Conference_Location
    Xiamen
  • ISSN
    1550-5723
  • Print_ISBN
    978-1-4673-0148-0
  • Type

    conf

  • DOI
    10.1109/ISAPM.2011.6105669
  • Filename
    6105669