Title :
Fibre-optic plate bonded Al0.3Ga0.7As/GaAs transmission photocathode
Author :
Kim, K.M. ; Kim, M. ; Cha, J.H. ; Kim, J.H. ; Kwon, Y.S.
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
Abstract :
An AlAs/GaAs/Al0.3Ga0.7As heterostructure on a GaAs substrate has been directly bonded on a fiber-optic plate for the first attempt of the 3rd generation transmission photocathode. The substrate is removed mechanically and etched chemically, utilizing high etching selectivities of GaAs and AlAs in potassium citrate/citric acid. The bonding strength between fiber optic and GaAs wafer exceeds 5.7 MPa without annealing, the final GaAs/Al0.3Ga0.7As structure on the fiber optic allows large dimension (1 cm × 1 cm), thin (2 μm) and uniform film thickness, and good transmission performance.
Keywords :
III-V semiconductors; aluminium compounds; etching; gallium arsenide; optical fibres; photocathodes; semiconductor devices; semiconductor thin films; wafer bonding; 2 mum; 3rd generation transmission photocathode; 5.7 MPa; AlAs-GaAs-Al0.3Ga0.7As; AlAs/GaAs/Al0.3Ga0.7As heterostructure; GaAs; GaAs substrate; GaAs wafer; GaAs/Al0.3Ga0.7As structure; bonding strength; chemical etching; etching selectivities; fibre-optic plate bonded Al0.3Ga0.7As/GaAs transmission photocathode; mechanical removal; potassium citrate/citric acid; transmission performance; uniform film thickness; Annealing; Cathodes; Etching; Gallium arsenide; Glass; Optical fibers; Rough surfaces; Substrates; Surface morphology; Wafer bonding;
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN :
0-7803-7766-4
DOI :
10.1109/CLEOPR.2003.1277098
