A lift-off process to build edge junction MIM active device arrays (LCD application)

Author

Wisnieff, R.L. ; Lien, A. ; Griffith, Jon H.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

1988

fDate

4-6 Oct. 1988

Firstpage

226

Lastpage

229

Abstract

A novel fabrication process is presented for tantalum pentoxide MIM displays that allows edge junctions to be used without the parasitic elements required in previous processes. This process has large tolerance to photolithographic alignment error because the junction area is determined by the thickness of a thin-film deposition. Experimental devices show that the process can produce devices with the same junction parameters as previous fabrication procedures, and that it can be scaled to produce high-resolution displays.<>

Keywords

field effect integrated circuits; integrated circuit technology; liquid crystal displays; metal-insulator-metal devices; photolithography; semiconductor technology; tantalum compounds; LCD; MIM active device arrays; Ta/sub 2/O/sub 5/; active matrix switching elements; edge junctions; high-resolution displays; lift-off process; photolithographic alignment error; thin-film deposition; Active matrix liquid crystal displays; Fabrication; Glass; Gray-scale; Insulation; Liquid crystal displays; MIM capacitors; Parasitic capacitance; Resists; Transmission line matrix methods;

fLanguage

English

Publisher

ieee

Conference_Titel

Display Research Conference, 1988., Conference Record of the 1988 International

Conference_Location

San Diego, CA, USA

Type

conf

DOI

10.1109/DISPL.1988.11317

Filename

11317