Title :
Prospects of Using In-Containing Semiconductor Materials in Magnetic Field Sensors for Thermonuclear Reactor Magnetic Diagnostics
Author :
Bolshakova, Inessa ; Vasilevskii, Ivan ; Viererbl, Ladislav ; Ďuran, Ivan ; Kovalyova, Nelli ; Kovarik, Karel ; Kost, Yaroslav ; Makido, Olena ; Sentkerestiová, Jana ; Shtabalyuk, Agata ; Shurygin, Fedir
Author_Institution :
Magn. Sensor Lab., Lviv Polytech. Nat. Univ., Lviv, Ukraine
Abstract :
The work presents the results of experimental investigation into the effect of neutron irradiation on thin-film magnetic field Hall sensors. It is shown that sensors based on InSb/i-GaAs heterostructures are promising for application under radiation conditions in thermonuclear reactor magnetic diagnostics systems. At the same time, the presence of buffer layers in InAs/i-GaAs heterostructures makes this material unfit for application under neutron flux conditions.
Keywords :
Hall effect transducers; III-V semiconductors; gallium arsenide; indium compounds; magnetic sensors; neutron effects; semiconductor heterojunctions; thin film devices; InSb-GaAs; in-containing semiconductor materials; magnetic field sensors; neutron flux conditions; neutron irradiation effect; thermonuclear reactor magnetic diagnostics systems; thin-film magnetic field Hall sensors; Inductors; Magnetic sensors; Materials; Neutrons; Radiation effects; Sensitivity; III-V semiconductor materials; magnetic sensors; neutron radiation effects; radiation-resistant Hall sensors;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2012.2217482
