DocumentCode
2682717
Title
An Ultra Low Transient GaAs FET VHF Switch
Author
White, Douglas W.
fYear
1984
fDate
May 30 1984-June 1 1984
Firstpage
155
Lastpage
157
Abstract
A simple unbalanced GaAs FET switch is described which has 20 dB lower peak transients than commercial balanced diode designs. An auto-transformer neutralization circuit provides more than 55 dB off-isolation over a three octave bandwidth. A novel scheme which derives both drive and bias from Schottky TTL gates eliminates the bipolar supplies and discrete drive circuitry usually found in high speed switches. A low level transient caused by carrier trapping in the GaAs material is described.
Keywords
Bandwidth; Capacitance; Communication switching; Filters; Gallium arsenide; Inductors; Microwave FETs; Radio frequency; Switches; VHF circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1984 IEEE MTT-S International
Conference_Location
San Francisco, CA, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1984.1131722
Filename
1131722
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