• DocumentCode
    2682790
  • Title

    V-Band Double-Drift Read Silicon IMPATTs

  • Author

    Ma, Y.E. ; Nakaji, E.M. ; Thrower, W.F.

  • fYear
    1984
  • fDate
    May 30 1984-June 1 1984
  • Firstpage
    167
  • Lastpage
    168
  • Abstract
    Double-drift hybrid Read silicon IMPATTs have been fabricated in the millimeter-wave frequency range with RF performance superior to that of more conventional double-drift flat diodes. State-of-the-art output power of 2.15 W was obtained at 60 GHz with 8.8 percent efficiency. The best DC-to-RF conversion efficiency achieved was 12 percent.
  • Keywords
    Capacitance measurement; Diodes; Electrical resistance measurement; Metallization; Millimeter wave technology; Power generation; Radio frequency; Silicon; Temperature; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1984 IEEE MTT-S International
  • Conference_Location
    San Francisco, CA, USA
  • ISSN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.1984.1131726
  • Filename
    1131726
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2682790