DocumentCode :
2682881
Title :
Parallel Feedback FETDRO Design Using 3-Port S-Parameters
Author :
Khanna, A.
fYear :
1984
fDate :
May 30 1984-June 1 1984
Firstpage :
181
Lastpage :
183
Abstract :
A new approach for the design of parallel feedback FET oscillators has been presented using 3-Port S parameters. The linear analysis accurately determines the reflection gain at any port as a function of the parameters of the dielectric resonator parallel feedback network between the other two ports of the FET. An example of design and practical realization of FETDRO is presented at 9 GHz.
Keywords :
Dielectrics; Feedback; Microstrip resonators; Microwave FET integrated circuits; Microwave FETs; Microwave integrated circuits; Microwave oscillators; Reflection; Scattering parameters; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1984 IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
ISSN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.1984.1131731
Filename :
1131731
Link To Document :
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