DocumentCode
2682931
Title
Study of fast transients generated in a GIS bus duct in compressed SF6-N2 gas mixtures containing lower percentages of SF6
Author
Singha, S. ; Thomas, Julian ; Naidu, M.S.
Author_Institution
Dept. of High Voltage Eng., Indian Inst. of Sci., Bangalore, India
fYear
2000
fDate
2000
Firstpage
118
Lastpage
122
Abstract
This paper deals with the study of very fast transient overvoltages (VFTO) with SF6-N2 gas mixture as the insulating medium, but with lower percentages of SF6 in the mixture. The investigations are performed using a laboratory model bus duct. A capacitive voltage sensor was used to measure the peak VFTO and temporal characteristics. Measurements were carried out in SF6N2 gas mixtures wherein the concentration of SF 6 was varied from 0 to 20% over a pressure range of 1 to 5 bars. The results are then compared with those obtained for pure SF6. The VFTO characteristics obtained for SF6 and SF6-N2 mixtures show similar trends in variations. The levels of surge peak magnitudes are less than 2.0 p.u. In the experimental pressure range in all the cases. In N2, the VFTO level remains almost constant with increase in pressure whereas in the case of mixtures, the VFTO level was found to increase with increase in pressure as well as with increase in the percentage of SF6 in the mixture. In mixtures, no significant difference in the VFTO levels is seen between 2-4 bars, although this fact is more pronounced at percentages of SF6 higher than 5%. This can be attributed to the occurrence of corona stabilization in the breakdown process
Keywords
SF6 insulation; corona; gas insulated switchgear; nitrogen; overvoltage; power system transients; 1 to 5 bar; GIS bus duct; SF6; SF6-N2; breakdown process; capacitive voltage sensor; compressed gas mixtures; corona stabilization; insulating medium; surge peak magnitudes; temporal characteristics; very fast transient overvoltages;
fLanguage
English
Publisher
iet
Conference_Titel
Dielectric Materials, Measurements and Applications, 2000. Eighth International Conference on (IEE Conf. Publ. No. 473)
Conference_Location
Edinburgh
Print_ISBN
0-85296-730-6
Type
conf
DOI
10.1049/cp:20000489
Filename
888098
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