Title :
Investigations of fluxless flip-chip bonding using vacuum ultraviolet and formic acid vapor surface treatment
Author :
Unami, N. ; Noma, H. ; Sakuma, K. ; Shigetou, A. ; Shoji, S. ; Mizuno, J.
Author_Institution :
Waseda Univ., Tokyo, Japan
Abstract :
We studied the effects of surface treatment using vacuum ultraviolet (VUV) and formic acid vapor for SnCu-Au flip-chip bonding. Sn-rich solder bumps are widely used for flip-chip interconnections because of low melting temperature and high mechanical strength. For fine pitch interconnections, surface modification is needed before the bonding process. X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES) were used to investigate Sn surfaces. The results showed how the VUV/O3 surface treatment removes the carbon-based organic contaminants from the Sn surfaces and the formic acid treatment reduces the metal oxides of Sn. Combination of VUV/O3 and formic acid treatments improved shear strength of a bonded sample. The average shear strength of each bump with VUV/O3 and/or formic acid treatment is about twice that of a bump with no treatment.
Keywords :
Auger electron spectroscopy; X-ray photoelectron spectra; bonding processes; copper alloys; flip-chip devices; gold; integrated circuit interconnections; melting; organic compounds; shear strength; solders; surface treatment; tin alloys; AES; Auger electron spectroscopy; SnCu-Au; VUV surface treatment; X-ray photoelectron spectroscopy; XPS; average shear strength; bonding process; carbon-based organic contaminant; fine pitch interconnection; flip-chip interconnection; fluxless flip-chip bonding; formic acid treatment; formic acid vapor surface treatment; low melting temperature; mechanical strength; solder bump; surface modification; vacuum ultraviolet surface treatment; Bonding; Flip chip; Silicon; Surface contamination; Surface treatment; Three dimensional displays; Tin;
Conference_Titel :
Advanced Packaging Materials (APM), 2011 International Symposium on
Conference_Location :
Xiamen
Print_ISBN :
978-1-4673-0148-0
DOI :
10.1109/ISAPM.2011.6105704