DocumentCode
2682997
Title
Electrical simulation of learning stage in OG-CNTFET based neural crossbar
Author
Retrouvey, Jean-Marie ; Klein, Jacques-Olivier ; Liao, Si-Yu ; MANEUX, Cristell
Author_Institution
IEF, Univ Paris-Sud, Orsay, France
fYear
2010
fDate
23-25 March 2010
Firstpage
1
Lastpage
5
Abstract
As the fabrication cost of CMOS mask increases exponentially while the technology is approaching its physical limits, research interest focuses on emerging technologies and alternative architectures. Non-volatile components are considered as possible alternative technologies and neural networks constitute an interesting framework. Here, we present a learning strategy applied to a new non volatile device: the Optically Gated Carbon Nanotube Field Effect Transistor (OG-CNTFET). In this paper, electrical simulations using accurate compact model demonstrate the efficiency of this method to learn linearly separable Boolean functions.
Keywords
Boolean functions; CMOS integrated circuits; carbon nanotubes; field effect transistors; neural nets; Boolean function; CMOS mask; electrical simulation; fabrication cost; learning stage; neural crossbar; neural network; nonvolatile component; optically gated carbon nanotube field effect transistor; Decision support systems; OG-CNTFET; compact model; gate protection; learning circuit; mixed signal simulation; neural network crossbar;
fLanguage
English
Publisher
ieee
Conference_Titel
Design and Technology of Integrated Systems in Nanoscale Era (DTIS), 2010 5th International Conference on
Conference_Location
Hammamet
Print_ISBN
978-1-4244-6338-1
Type
conf
DOI
10.1109/DTIS.2010.5487555
Filename
5487555
Link To Document