• DocumentCode
    2682997
  • Title

    Electrical simulation of learning stage in OG-CNTFET based neural crossbar

  • Author

    Retrouvey, Jean-Marie ; Klein, Jacques-Olivier ; Liao, Si-Yu ; MANEUX, Cristell

  • Author_Institution
    IEF, Univ Paris-Sud, Orsay, France
  • fYear
    2010
  • fDate
    23-25 March 2010
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    As the fabrication cost of CMOS mask increases exponentially while the technology is approaching its physical limits, research interest focuses on emerging technologies and alternative architectures. Non-volatile components are considered as possible alternative technologies and neural networks constitute an interesting framework. Here, we present a learning strategy applied to a new non volatile device: the Optically Gated Carbon Nanotube Field Effect Transistor (OG-CNTFET). In this paper, electrical simulations using accurate compact model demonstrate the efficiency of this method to learn linearly separable Boolean functions.
  • Keywords
    Boolean functions; CMOS integrated circuits; carbon nanotubes; field effect transistors; neural nets; Boolean function; CMOS mask; electrical simulation; fabrication cost; learning stage; neural crossbar; neural network; nonvolatile component; optically gated carbon nanotube field effect transistor; Decision support systems; OG-CNTFET; compact model; gate protection; learning circuit; mixed signal simulation; neural network crossbar;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design and Technology of Integrated Systems in Nanoscale Era (DTIS), 2010 5th International Conference on
  • Conference_Location
    Hammamet
  • Print_ISBN
    978-1-4244-6338-1
  • Type

    conf

  • DOI
    10.1109/DTIS.2010.5487555
  • Filename
    5487555