Title :
A 1-Watt, 8-17 GHz FET Power Amplifier
Author :
Dao, T. ; Tsai, W.C. ; Healy, R. ; Liles, B.
fDate :
May 30 1984-June 1 1984
Abstract :
Design and performance of a compact size 1-Watt, 8-17 GHz, 38 +- 3 dB gain FET amplifier for airborne ECM applications is described. The amplifier with a gain temperature compensation PIN diode stage and a bias regulator is packaged in 1.1 x 0.5 x 3.65 inches hermetically sealed housing.
Keywords :
Circuits; Frequency; Gain; Hermetic seals; High power amplifiers; Microwave FETs; Power amplifiers; Power generation; Regulators; Temperature;
Conference_Titel :
Microwave Symposium Digest, 1984 IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/MWSYM.1984.1131742
