A new built-in self-test (BIST) for a RF low-noise amplifier (LNA)

Author

Ayadi, R. ; Masmoudi, M.

Author_Institution

Micro-Technol. & Commun. (EMC) Reach Group, Nat. Eng. Sch. of Sfax (ENIS), Sfax, Tunisia

fYear

2010

fDate

23-25 March 2010

Firstpage

1

Lastpage

5

Abstract

In this paper, we present a new RF built-in self test (BIST) circuit for 865-870 MHz low noise amplifiers (LNAs); The BIST and LNA circuit is designed using 0.35 μm CMOS technology. The simple circuit of test that contains a RF peak detectors and two comparators brings high fault coverage. The faults simulating possible catastrophic and parametric faults are introduced. A total of twenty eight short and open faults and ten parameters variation have been introduced into the LNA, giving fault coverage of 89% for catastrophic faults and 90% for process variation.

Keywords

CMOS analogue integrated circuits; built-in self test; comparators (circuits); low noise amplifiers; peak detectors; radiofrequency amplifiers; BIST; CMOS technology; LNA; RF low-noise amplifier; RF peak detector; built-in self-test; comparator; frequency 865 MHz to 870 MHz; size 0.35 micron; Automatic testing; Built-in self-test; CMOS technology; Circuit faults; Circuit noise; Circuit testing; Electrical fault detection; Low-noise amplifiers; Radio frequency; Radiofrequency amplifiers; Built-in self test (BIST); Fault models; fault coverage; low noise amplifiers (LNA);

fLanguage

English

Publisher

ieee

Conference_Titel

Design and Technology of Integrated Systems in Nanoscale Era (DTIS), 2010 5th International Conference on

Conference_Location

Hammamet

Print_ISBN

978-1-4244-6338-1

Type

conf

DOI

10.1109/DTIS.2010.5487559

Filename

5487559