Title :
Third-Order Nonlinearity of GaAs MESFET´s
Author :
Abeles, J.H. ; Wemple, S.H. ; Schlosser, W.O.W. ; Beccone, J.P.
fDate :
May 30 1984-June 1 1984
Abstract :
Direct linearity measurements at 6 GHz show that Bell Labs GaAs MESFET´s are effectively third-order in AM/PM up to output powers near saturation, and that AM/AM can be made negligible through bias adjustment. This permits the use of predistortion techniques to attain extremely high linearity power amplification.
Keywords :
Bridge circuits; Gallium arsenide; Linearity; MESFETs; Phase distortion; Phase measurement; Power generation; Power measurement; Predistortion; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1984 IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/MWSYM.1984.1131744
