DocumentCode :
2683121
Title :
The multiple-arc analysis for dielectric dispersions
Author :
Al-Refaie, S.N.
Author_Institution :
Yarmouk Univ., Irbid, Jordan
fYear :
2000
fDate :
2000
Firstpage :
177
Lastpage :
181
Abstract :
The multiple-arc approach is used to investigate the dispersion of an InP-oxide thin film. The method is applied in conjunction with a tunneling model to reveal a distribution of states at the interfacial region. The method is also employed to develop an equivalent circuit for the oxide dielectric whereby overlapping arcs introduced negative impedance converters in the network
Keywords :
dielectric relaxation; dielectric thin films; equivalent circuits; interface states; negative impedance convertors; permittivity; tunnelling; InP; dielectric dispersions; equivalent circuit; interface states; multiple-arc analysis; negative impedance converters; overlapping arcs; oxide dielectric; oxide thin film; tunneling model;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Dielectric Materials, Measurements and Applications, 2000. Eighth International Conference on (IEE Conf. Publ. No. 473)
Conference_Location :
Edinburgh
Print_ISBN :
0-85296-730-6
Type :
conf
DOI :
10.1049/cp:20000500
Filename :
888109
Link To Document :
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