Title :
A comparison of copper sulfate and methanesulfonate electrolytes in the copper plating process for through silicon via metallization
Author :
Wu, H. L Henry ; Lee, S. W Ricky
Author_Institution :
Center for Adv. Microsyst. Packaging, Hong Kong Univ. of Sci. & Technol., Kowloon, China
Abstract :
In this study, authors studied and compared the behaviors of the additives in copper sulfate and cupric methanesulfonate electrolytes by means of electrochemical measurement method with a rotary electrode. The electrochemical parameters including exchange current density and cathodic transfer coefficient of the electrolytes were successfully determined utilizing linear sweep voltammetry. Chronoamperometry (CA) was conducted to verify the diffusion time of additives to the surface of electrodes and the corresponding diffusion constants were characterized. Copper plating of 50/200 μm TSVs was achieved with copper sulfate and cupric methanesulfonate electrolytes respectively. The plated surface morphologies were studied using Scanning Electron Microscopy (SEM).
Keywords :
copper compounds; electrochemical electrodes; electrolytes; electroplating; organic compounds; scanning electron microscopy; surface morphology; three-dimensional integrated circuits; voltammetry (chemical analysis); CA; CuSO4; SEM; cathodic transfer coefficient; chronoamperometry; copper plating process; cupric methanesulfonate electrolyte; current density; electrochemical measurement method; linear sweep voltammetry; plated surface morphology; rotary electrode; scanning electron microscopy; size 200 mum; size 50 mum; through silicon via metallization; Additives; Copper; Current density; Electrodes; Filling; Through-silicon vias;
Conference_Titel :
Advanced Packaging Materials (APM), 2011 International Symposium on
Conference_Location :
Xiamen
Print_ISBN :
978-1-4673-0148-0
DOI :
10.1109/ISAPM.2011.6105719