A new PSO-based approach to study the nanoscale DG MOSFETs

Author

Bendib, T. ; Djeffal, F. ; Abdi, M.A.

Author_Institution

Dept. of Electron., Univ. of Batna, Batna, Algeria

fYear

2010

fDate

23-25 March 2010

Firstpage

1

Lastpage

5

Abstract

The Double Gate (DG) MOSFET has been proposed as potential alternative to the conventional bulk CMOS structure for extended CMOS scalability beyond 30 nm partly due to its immunity to short channel effects. So, the objective of this work is to provide an accurate drain current model based on an automatic parameter extraction method with PSO (Particle Swarm Optimization) for Current-Voltage-based MOSFET models. Extracted parameter values reproduce I-V characteristics within 5% RMS error for wide range of gate lengths. It is shown that the I-V characteristics predicted by our analytical model are in close agreement with 2-D numerical simulation results.

Keywords

CMOS integrated circuits; MOSFET; numerical analysis; particle swarm optimisation; 2D numerical simulation; I-V characteristics; automatic parameter extraction method; current-voltage-based MOSFET model; drain current model; extended CMOS scalability; nanoscale double gate MOSFET; particle swarm optimization; short channel effects; Analytical models; Computational modeling; Databases; MOSFETs; Nanoscale devices; Numerical simulation; Parameter extraction; Particle swarm optimization; Semiconductor device modeling; Space technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Design and Technology of Integrated Systems in Nanoscale Era (DTIS), 2010 5th International Conference on

Conference_Location

Hammamet

Print_ISBN

978-1-4244-6338-1

Type

conf

DOI

10.1109/DTIS.2010.5487571

Filename

5487571