DocumentCode :
2683304
Title :
Surface- potential- based model to study the subthreshold swing behavior including hot-carrier effect for nanoscale GASGAA MOSFETs
Author :
Faycal, Djeffal ; AMIR, ABDI MOHAMED ; Djemai, Arar ; TOUFIK, BENDIB
Author_Institution :
Dept. d´´Electron., Univ. de Batna, Batna, Algeria
fYear :
2010
fDate :
23-25 March 2010
Firstpage :
1
Lastpage :
4
Abstract :
The proper design and simulation of future nanoelectronics digital devices requires accurate models of subthreshold behavior. The Gate All Around (GAA) MOSFET is considered one the most promising devices for downscaling below 50 nm. However, challenges still remain to resolve the important issues particularly concerning hot-carrier reliability and accurate device models for nanoscale circuit designs. Hot-carrier effects have been the major issues in the long-term stability of subthreshold performances in a nanoscale MOS transistor. Therefore, in this paper an analytical, surface-potential-based, model for the subthreshold swing of undoped GAA MOSFETs has been derived at low drain-source voltage based on an analytical solution of the two-dimensional Poisson equation (in cylindrical coordinates) with the hot carrier term included. The new model has been verified by comparison with 2-D numerical simulations.
Keywords :
MOSFET; Poisson equation; hot carriers; nanoelectronics; semiconductor device models; semiconductor device reliability; surface potential; 2D numerical simulations; gate stack gate all around MOSFET; hot-carrier effect reliability; long-term stability; low drain-source voltage; nanoelectronic digital devices; nanoscale GASGAA MOSFET; nanoscale MOS transistor; nanoscale circuit designs; subthreshold behavior model; subthreshold swing behavior model; surface-potential-based model; two-dimensional Poisson equation; Analytical models; Circuit simulation; Circuit stability; Circuit synthesis; Hot carrier effects; Hot carriers; Low voltage; MOSFETs; Nanoelectronics; Nanoscale devices; GAA MOSFET; nanoscale; subthreshold swing; surface-potential;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Design and Technology of Integrated Systems in Nanoscale Era (DTIS), 2010 5th International Conference on
Conference_Location :
Hammamet
Print_ISBN :
978-1-4244-6338-1
Type :
conf
DOI :
10.1109/DTIS.2010.5487573
Filename :
5487573
Link To Document :
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