DocumentCode :
268347
Title :
3D Magnetic Field Sensor Concept for Use in Inertial Measurement Units (IMUs)
Author :
Ettelt, Dirk ; Rey, Patrice ; Jourdan, G. ; Walther, Andrea ; Robert, Philippe ; Delamare, Jérôme
Author_Institution :
Lab. for Electron. & Inf. Technol., CEA, Grenoble, France
Volume :
23
Issue :
2
fYear :
2014
fDate :
Apr-14
Firstpage :
324
Lastpage :
333
Abstract :
We report on the design, fabrication, and characterization of a microfabricated 3D magnetic field sensor that is suitable for co-integration with inertial sensors to form single-chip inertial measurement units. In contrast to classical resonant MEMS magnetometers, which are based on Lorentz force measurement, our sensor uses permanent magnetic materials and piezoresistive detection with silicon strain gauges of nanometric section, leading to low power consumption and high sensitivity for small sensor size. Thin multilayers of CoFe and PtMn as ferro- and antiferromagnetic materials are integrated within the MEMS fabrication process. Sensitivities of 1.09 V/T for x- and y- components of the magnetic field and 0.124 V/T for z- component of the magnetic field were measured, respectively. To be sensitive to magnetic fields along all three spatial directions, two permanent magnetization directions on the same die are required. Implementation of the two magnetization directions was validated by a measured correlation of 99.7% between x- and y- sensitivity axes. Power consumption of the 3D sensor is for polarization with a 100 μA dc current. With resolutions of 100 nT/√Hz for x- and y-component of the magnetic field and 350 nT/√Hz for z- component, the sensor is suitable for precise measurement of earth magnetic field.
Keywords :
antiferromagnetic materials; cobalt alloys; elemental semiconductors; force measurement; inertial navigation; inertial systems; iron alloys; magnetic field measurement; magnetic multilayers; magnetic sensors; magnetisation; magnetometers; manganese alloys; microfabrication; microsensors; permanent magnets; piezoresistive devices; platinum alloys; polarisation; silicon; strain gauges; thin film sensors; 3D magnetic field sensor microfabrication; CoFe-PtMn; Lorentz force measurement; MEMS fabrication process; Si; current 100 muA; earth magnetic field measurement precision; inertial sensor; low power consumption; nanometric section; permanent magnetic materials; permanent magnetization directions; piezoresistive detection; polarization; resonant MEMS magnetometer; silicon strain gauge; single chip inertial measurement unit; thin antiferromagnetic materials multilayer; Magnetic multilayers; Magnetometers; Micromechanical devices; Perpendicular magnetic anisotropy; Saturation magnetization; Torque; 3D magnetometer; MEMS; magnetic material; silicon strain gauge;
fLanguage :
English
Journal_Title :
Microelectromechanical Systems, Journal of
Publisher :
ieee
ISSN :
1057-7157
Type :
jour
DOI :
10.1109/JMEMS.2013.2273362
Filename :
6570487
Link To Document :
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