DocumentCode
2683493
Title
Effect of deposit microstructure on the reflow discoloration of electroplating pure tin
Author
Sun, Hongqi ; Sun, Jiangyan ; Ding, Dongyan ; Chen, Chun ; Li, Ming ; He, Yanfeng
Author_Institution
Sch. of Mater. Sci. & Eng., Shanghai Jiao Tong Univ., Shanghai, China
fYear
2011
fDate
25-28 Oct. 2011
Firstpage
158
Lastpage
162
Abstract
In response to lead-free requirements and market forces, pure tin finishes have been widely used as a Pb-free option for semiconductor lead frames and electrical connectors in the microelectronics industry. Pure tin finishes could easy have a discoloration during reflow process since the reflow temperature is as high as 260°C, which could lead to a reliability issue. In this work, matte tin was electroplated onto C194 substrate. The microstructure of the deposit fabricated at different current density and different stannous concentrations was investigated with scanning electron microscope (SEM). It was found that, with increase of the current density and decrease of the stannous concentration, the grain size became smaller and the grain structure became looser, which resulted in the discoloration of pure tin finishes. Moreover, the compactness of the deposit and the current efficiency were also reduced. Copper diffusion was found to occur more easily in the deposit with a lower compactness, which may promote interfacial reaction to form intermetallic compounds (IMC) and further accelerate reflow discoloration of the pure Sn deposits.
Keywords
compaction; copper; current density; diffusion; electroplating; elemental semiconductors; grain size; scanning electron microscopy; semiconductor growth; semiconductor thin films; tin; C 194 substrates; Cu-Sn; SEM; compaction; copper diffusion; current density; electrical connectors; electroplating pure tin; grain size; grain structure; interfacial reaction; intermetallic compounds; microelectronics industry; microstructure; reflow discoloration; reliability; scanning electron microscopy; semiconductor lead frames; stannous concentrations; temperature 260 degC; thin films; Copper; Current density; Grain size; Microstructure; Surface treatment; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Packaging Materials (APM), 2011 International Symposium on
Conference_Location
Xiamen
ISSN
1550-5723
Print_ISBN
978-1-4673-0148-0
Type
conf
DOI
10.1109/ISAPM.2011.6105731
Filename
6105731
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