• DocumentCode
    2683493
  • Title

    Effect of deposit microstructure on the reflow discoloration of electroplating pure tin

  • Author

    Sun, Hongqi ; Sun, Jiangyan ; Ding, Dongyan ; Chen, Chun ; Li, Ming ; He, Yanfeng

  • Author_Institution
    Sch. of Mater. Sci. & Eng., Shanghai Jiao Tong Univ., Shanghai, China
  • fYear
    2011
  • fDate
    25-28 Oct. 2011
  • Firstpage
    158
  • Lastpage
    162
  • Abstract
    In response to lead-free requirements and market forces, pure tin finishes have been widely used as a Pb-free option for semiconductor lead frames and electrical connectors in the microelectronics industry. Pure tin finishes could easy have a discoloration during reflow process since the reflow temperature is as high as 260°C, which could lead to a reliability issue. In this work, matte tin was electroplated onto C194 substrate. The microstructure of the deposit fabricated at different current density and different stannous concentrations was investigated with scanning electron microscope (SEM). It was found that, with increase of the current density and decrease of the stannous concentration, the grain size became smaller and the grain structure became looser, which resulted in the discoloration of pure tin finishes. Moreover, the compactness of the deposit and the current efficiency were also reduced. Copper diffusion was found to occur more easily in the deposit with a lower compactness, which may promote interfacial reaction to form intermetallic compounds (IMC) and further accelerate reflow discoloration of the pure Sn deposits.
  • Keywords
    compaction; copper; current density; diffusion; electroplating; elemental semiconductors; grain size; scanning electron microscopy; semiconductor growth; semiconductor thin films; tin; C 194 substrates; Cu-Sn; SEM; compaction; copper diffusion; current density; electrical connectors; electroplating pure tin; grain size; grain structure; interfacial reaction; intermetallic compounds; microelectronics industry; microstructure; reflow discoloration; reliability; scanning electron microscopy; semiconductor lead frames; stannous concentrations; temperature 260 degC; thin films; Copper; Current density; Grain size; Microstructure; Surface treatment; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Packaging Materials (APM), 2011 International Symposium on
  • Conference_Location
    Xiamen
  • ISSN
    1550-5723
  • Print_ISBN
    978-1-4673-0148-0
  • Type

    conf

  • DOI
    10.1109/ISAPM.2011.6105731
  • Filename
    6105731