• DocumentCode
    2683548
  • Title

    Light emission in (La, Al)2O3/Si MOS tunnel diodes

  • Author

    Lin, Colin Yu ; Lee, H.Y. ; Chin, Alvin

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • Volume
    2
  • fYear
    2003
  • fDate
    15-19 Dec. 2003
  • Abstract
    Efficient light emission from (La, Al)2/Si MOS tunnel diodes with photon energies ranging from 1.4 to 1.6 eV was demonstrated. This novel technology should find wide applications in optical interconnects and wireless communications.
  • Keywords
    MIS devices; aluminium compounds; elemental semiconductors; lanthanum compounds; light emitting diodes; silicon; tunnel diodes; (La, Al)2O3/Si MOS tunnel diodes; 1.4 to 1.6 eV; Al2O3-Si; La2O3-Si; Si-based light emitting devices; light emission; optical interconnects; photon energy; wireless communications; Dielectric materials; Dielectric measurements; Diodes; High K dielectric materials; High-K gate dielectrics; Optical interconnections; Optical materials; Quantization; Surface fitting; Thickness measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
  • Print_ISBN
    0-7803-7766-4
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2003.1277163
  • Filename
    1277163
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2683548