DocumentCode :
2683610
Title :
TWTA Linearize Using Dual-Gate MESFET
Author :
Kumar, M. ; Whartenby, J.C.
fYear :
1984
fDate :
May 30 1984-June 1 1984
Firstpage :
314
Lastpage :
315
Abstract :
This paper presents a new predistortion technique using GaAs dual-gate MESFETs to linearize the microwave power amplifiers. The results of a linearized 16-watt traveling wave tube amplifier at 12 GHz are presented. The linearize affects a 12 dB reduction in this third-order intermodulation products at 2.5 dB input power back off.
Keywords :
Attenuators; Circuits; FETs; High power amplifiers; MESFETs; Microwave amplifiers; Phase distortion; Power amplifiers; Power generation; Predistortion;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1984 IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
ISSN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.1984.1131776
Filename :
1131776
Link To Document :
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