Title :
CW lasing of self-assembled InAs quantum dot lasers on GaAs substrates grown by metalorganic chemical vapour deposition
Author :
Tatebayashi, J. ; Kakuma, H. ; Hatori, N. ; Ishida, M. ; Ebe, H. ; Sudo, H. ; Kuramata, A. ; Nakata, Y. ; Sugawara, M. ; Arakawa, Y.
Abstract :
We report the fabrication and laser characteristics of self-assembled InAs quantum dot lasers on GaAs substrates grown by metalorganic chemical vapor deposition. Continuous-wave lasing at room temperature with low threshold current (6.7 mA) has been achieved at the lasing wavelength of 1.18 μm.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; optical fabrication; quantum dot lasers; self-assembly; semiconductor quantum dots; 1.18 mum; 25 degC; 6.7 mA; GaAs; GaAs substrates; InAs-GaAs; continuous-wave lasing; cw lasing; laser characteristics; low threshold current; metalorganic chemical vapour deposition; room temperature; self-assembled InAs quantum dot lasers; semiconductor lasers; Chemical lasers; Chemical vapor deposition; Gallium arsenide; Laser theory; MOCVD; Molecular beam epitaxial growth; Quantum dot lasers; Semiconductor lasers; Substrates; US Department of Transportation;
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN :
0-7803-7766-4
DOI :
10.1109/CLEOPR.2003.1277174
