Title :
Evolution, challenge, and outlook of TSV, 3D IC integration and 3d silicon integration
Author_Institution :
Electron. & Optoelectron. Res. Lab., Ind. Technol. Res. Inst. (ITRI), Hsinchu, Taiwan
Abstract :
3D integration consists of 3D IC packaging, 3D IC integration, and 3D Si integration. They are different and in general the TSV (through-silicon via) separates 3D IC packaging from 3D IC/Si integrations since the latter two use TSV but 3D IC packaging does not. TSV (with a new concept that every chip or interposer could have two surfaces with circuits) is the heart of 3D IC/Si integrations and is the focus of this investigation. The origin of 3D integration is presented. Also, the evolution, challenges, and outlook of 3D IC/Si integrations are discussed as well as their road maps are presented. Finally, a few generic, low-cost, and thermal-enhanced 3D IC integration system-in-packages (SiPs) with various passive TSV interposers are proposed.
Keywords :
silicon; system-in-package; three-dimensional integrated circuits; 3D IC integration; 3D IC packaging; 3D Si integration; 3D silicon integration; SiP; TSV; passive interposer; system-in-package; through-silicon via; Bonding; Integrated circuit packaging; Silicon; Stacking; Three dimensional displays; Through-silicon vias; 3D IC integration; 3D Si integration; C2W and W2W bonding; TSV; active and passive interposers;
Conference_Titel :
Advanced Packaging Materials (APM), 2011 International Symposium on
Conference_Location :
Xiamen
Print_ISBN :
978-1-4673-0148-0
DOI :
10.1109/ISAPM.2011.6105753