Further improvements of surface transverse wave resonator performance in the 2.0 to 2.5 GHz range

Author

Avramov, I.D. ; Ikata, O. ; Matsuda, T. ; Nishihara, T. ; Satoh, Y.

Author_Institution

Inst. of Solid State Phys., Sofia, Bulgaria

fYear

1997

fDate

28-30 May 1997

Firstpage

807

Lastpage

815

Abstract

This paper presents state-of-the-art results from improved designs of surface transverse wave (STW) two-port resonators operating in the 2.0 to 2.5 GHz range. With these designs we have succeeded to double both the loaded and unloaded device Q compared to 2.0 GHz devices reported at the 1995 Frequency Control Symposium. Four different designs, fabricated in a conventional photolithographic process, are presented and their electrical performance is discussed. Unloaded device Q values exceeding by 30 to 45% the material Q limit for surface acoustic waves (SAW) and insertion loss values in the 8 to 16 dB range are obtained with 2.0 GHz single and multimode two-port devices. Data on film thickness, finger-to-gap ratio and spacer variation sensitivities as well as temperature stability and radio frequency (RF) power handling are discussed

Keywords

Q-factor; surface acoustic wave resonators; 2.0 to 2.5 GHz; 8 to 16 dB; Q factor; film thickness; finger-to-gap ratio; insertion loss; photolithography; radio frequency power handling; spacer variation sensitivity; surface acoustic waves; surface transverse wave resonator; temperature stability; two-port resonator; Acoustic materials; Acoustic waves; Frequency control; Insertion loss; Radio frequency; Stability; Surface acoustic wave devices; Surface acoustic waves; Surface waves; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Frequency Control Symposium, 1997., Proceedings of the 1997 IEEE International

Conference_Location

Orlando, FL

Print_ISBN

0-7803-3728-X

Type

conf

DOI

10.1109/FREQ.1997.639194

Filename

639194