DocumentCode :
2684118
Title :
Calculated magnetic field advection in plasma opening switches
Author :
Wilson, D.C. ; Mason, R.J. ; Jones, M.E. ; Bergman, C. ; Grossmann, J.M. ; Ottinger, P.F.
fYear :
1990
fDate :
21-23 May 1990
Firstpage :
146
Lastpage :
147
Abstract :
Summary form only given. In an effort to work toward a strong basic understanding of the operation of plasma opening switches (POSs), theory and numerical experiment have been compared with the aim of developing a reliable predictive capability. It has been shown that under idealized conditions (with fixed ions) the magnetic field can penetrate the Cartesian plasma as a nonlinear wave with a specified speed. A 2-D numerical study shows (1) Cartesian field accumulation mainly along the dense anode, (2) penetration along the interface of a small density jump midway between planar electrodes, (3) favored cathode field penetration when the density rises quadratically toward the anode or is simply constant in cylindrical geometry, and (4) deep `snakelike´ field penetration when the density varies in a sinusoidal perturbation with radius. Moreover, when the ions can move, initial density perturbations grow deeper from ion erosion and magnetic pressure effects. This propagates the field penetration faster, creating rising density profiles, which favor the advective penetration mechanism
Keywords :
plasma switches; 2-D numerical study; Cartesian plasma; advective penetration mechanism; cathode field penetration; deep snakelike field penetration; dense anode; density profiles; field accumulation; initial density perturbations; interface; ion erosion; magnetic field advection; magnetic pressure effects; nonlinear wave; penetration; planar electrodes; plasma opening switches; small density jump;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Science, 1990. IEEE Conference Record - Abstracts., 1990 IEEE International Conference on
Conference_Location :
Oakland, CA, USA
Type :
conf
DOI :
10.1109/PLASMA.1990.110675
Filename :
5725948
Link To Document :
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