• DocumentCode
    2684239
  • Title

    Self-Consistent FET Models for Amplifier Design and Device Diagnostics

  • Author

    Curtice, W.R. ; Camisa, R.L.

  • fYear
    1984
  • fDate
    May 30 1984-June 1 1984
  • Firstpage
    427
  • Lastpage
    429
  • Abstract
    A procedure has been developed for producing accurate and unique equivalent circuit models for carrier mounted GaAs FETs. The procedure incorporates zero drain-source bias S-parameter tests as well as Fukui-type, dc measurements. Data for 1 µm gate length, 600 µm periphery GaAs FETs are presented.
  • Keywords
    Capacitors; Electrical resistance measurement; Equivalent circuits; Gallium arsenide; Inductance; Microwave FETs; Microwave devices; Microwave technology; Scattering parameters; Semiconductor device measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1984 IEEE MTT-S International
  • Conference_Location
    San Francisco, CA, USA
  • ISSN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.1984.1131817
  • Filename
    1131817
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2684239