Title :
A 6 Watt 6 GHz GaAsFET Power Module with GaAs Matching Circuits
Author :
Magalhaes, F.M. ; Beccone, J.P. ; Irvin, J.C. ; Perelli, S.J. ; Schlosser, W.O.
fDate :
May 30 1984-June 1 1984
Abstract :
A GaAs matched FET (M-FET) technology has been developed which incorporates separate GaAs matching chips and GaAsFETs within a small hermetic package. By using two separately matched 6 mm FET chips in the design, we have achieved 6.3 watts of output power with 9 dB associated gain at 6 GHz.
Keywords :
Bandwidth; Capacitors; Circuit optimization; FETs; Gallium arsenide; Impedance; Monolithic integrated circuits; Multichip modules; Packaging; Power transmission lines;
Conference_Titel :
Microwave Symposium Digest, 1984 IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/MWSYM.1984.1131821
