Title :
A C-Band 10 Watt GaAs Power FET
Author :
Fukaya, J. ; Ishii, M. ; Matsumoto, M. ; Hirano, Y.
fDate :
May 30 1984-June 1 1984
Abstract :
A new GaAs high power FET has been developed. The FET chip with 10.8mm gate-width employs a deep recess, via hole PHS, anair bridge gate-source cross-over and novel gate feeder network technology. The internally matched device which consists of two chips (total gate-width; 21.6mm) has realized 10 watts of 1dB gain compression power with 8dB gain and 43% power added efficiency at 8GHz.
Keywords :
Bridge circuits; Circuit testing; Electrodes; FETs; Fingers; Gallium arsenide; Gold; Packaging; Power generation; Thermal resistance;
Conference_Titel :
Microwave Symposium Digest, 1984 IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/MWSYM.1984.1131822
