DocumentCode :
2684411
Title :
Class-E power amplifier optimization for operation above maximum frequency
Author :
Jee, Seunghoon ; Moon, Junghwan ; Kim, Jungjoon ; Son, Junghwan ; Kim, Bumman
Author_Institution :
Dept. of Electr. Eng., Pohang Univ. of Sci. & Technol. (POSTECH), Pohang, South Korea
fYear :
2011
fDate :
7-9 Nov. 2011
Firstpage :
1
Lastpage :
5
Abstract :
The optimized Class-E power amplifier (PA) for operation above the maximum frequency is described. We have found that the performance of the Class-E PA above the maximum frequency can be enhanced by the bifurcated current through saturation. The performance of the Class-E PA can be further improved by the inductive second harmonic tuning and power matched fundamental load. The resulting saturated amplifier delivers higher output power and efficiency because of the tuned load and the proper second harmonic voltage component generated by the second harmonic load matching. A highly efficient saturated amplifier is designed using Cree GaN HEMT CGH40010 device at 3.5 GHz. It provides a drain efficiency of 75.8% at a saturated power of 40.2 dBm (10.5W).
Keywords :
circuit optimisation; high electron mobility transistors; microwave power amplifiers; Cree GaN HEMT CGH40010 device; bifurcated current; class-E power amplifier optimization; drain efficiency; frequency 3.5 GHz; highly efficient saturated amplifier; inductive second harmonic tuning; maximum frequency; power 10.5 W; power matched fundamental load; saturated amplifier; second harmonic load matching; second harmonic voltage component; HEMTs; Harmonic analysis; Load modeling; Power generation; Power system harmonics; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwaves, Communications, Antennas and Electronics Systems (COMCAS), 2011 IEEE International Conference on
Conference_Location :
Tel Aviv
Print_ISBN :
978-1-4577-1692-8
Type :
conf
DOI :
10.1109/COMCAS.2011.6105777
Filename :
6105777
Link To Document :
بازگشت