Title :
High temperature alloy and contact annealing with RTA on AlSi/TiW metallization
Author :
Chou, H.M. ; Su, W.D. ; Liou, J.C. ; Tuan, H.C.
Author_Institution :
Electron. Res. & Service Organ, Hsin-Chu, Taiwan
Abstract :
New processes for AlSi/TiW metallization are described, involving simple modifications of the conventional process. An important change is the use of rapid thermal annealing of the TiW before AlSi deposition. The p+ contact resistance and its deviation are reduced by more than 50%, and the n+ contact remains good. Reliability implications are also addressed. This simple process is anticipated to upgrade AlSi/TiW metallization
Keywords :
aluminium compounds; annealing; circuit reliability; integrated circuit technology; metallisation; titanium compounds; AlSi-TiW metallisation; RTA; VLSI fabrication; contact annealing; high temperature alloy annealing; n+ contact; p+ contact resistance; rapid thermal annealing; reliability; Annealing; Conductivity; Contact resistance; Electromigration; Electronics industry; Furnaces; Industrial electronics; Metallization; Temperature; Thermal degradation;
Conference_Titel :
VLSI Technology, Systems and Applications, 1989. Proceedings of Technical Papers. 1989 International Symposium on
Conference_Location :
Taipei
DOI :
10.1109/VTSA.1989.68584
