Variable transmission lines: Structure and compact modeling

Author

Shlafman, Shlomo ; Goren, David ; Sheinman, Benny ; Karni, Giora ; Valdes-Garcia, Alberto ; Elad, Danny

Author_Institution

IBM Haifa R&D, Haifa, Israel

fYear

2011

fDate

7-9 Nov. 2011

Firstpage

1

Lastpage

4

Abstract

The concept of Variable Transmission Lines (VTL) offers digital tuning of transmission line characteristics to compensate for process variations and parasitic modeling uncertainties. VTL structures and models enabling robust silicon-based millimeter-wave IC design are proposed along with a compact model for their efficient simulation. The developed compact models have been successfully integrated into a standard silicon-foundry design kit to enable, for the first time, circuit-level simulations with parametric VTL. Several VTL evaluation structures have been fabricated in IBM 32nm CMOS SOI technology. Measurement results up to 65GHz are presented to evaluate the proposed structures and their models.

Keywords

CMOS integrated circuits; MIMIC; elemental semiconductors; integrated circuit design; integrated circuit modelling; silicon; silicon-on-insulator; transmission lines; IBM CMOS SOI technology; Si; VTL; circuit-level simulation; digital tuning; parasitic modeling uncertainty; process variations compensation; silicon-based millimeter-wave IC design; size 32 nm; standard silicon-foundry design kit; variable transmission line; CMOS integrated circuits; Capacitance; Inductance; Integrated circuit modeling; Power transmission lines; Semiconductor device modeling; Transmission line measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwaves, Communications, Antennas and Electronics Systems (COMCAS), 2011 IEEE International Conference on

Conference_Location

Tel Aviv

Print_ISBN

978-1-4577-1692-8

Type

conf

DOI

10.1109/COMCAS.2011.6105778

Filename

6105778