HMIC the ultimate SOI microwave integrated circuit technology

HMIC is a microwave and mmW integrated circuit topology that can create three dimensional structures based upon a inimitable marriage of silicon and glass at a waferscale level which enable high performance, low loss, lower cost realizations of many of the classic hybrid MMIC´s. In addition, the unique nature of the bonding together of these two dissimilar materials into common substrate allows the monolithic insertion of active elements in combination with low loss, high Q, lumped element passive components to produce microwave circuits that can be realized no other way or at as low a cost. Silicon has a high thermal conductivity and can be doped over a very wide range of resistivities, while glass is a true insulator and has a very low high frequency loss tangent. Thus HMIC based circuits are able to be produced that have frequency responses as high as 110 GHz while still being able to handle tens of watts of power. This capability is truly unique in the world of MMIC´s as well as SOI based integrated circuits. This paper will illustrate the distinctive aspects of the HMIC technology as well as providing detailed descriptions of high Q component construction, and several single function integrated circuits, both passive and active, that can be realized. These descriptions will include electrical schematics, actual circuit topologies, and the resultant high frequency performance.