DocumentCode

2684499

Title

Comprehensive gate-oxide reliability evaluation for dram processes

Author

Vollertsen, R.-P. ; Abadeer, W.W.

Author_Institution

ISMMENS Comp., Inc.

fYear

1996

fDate

1996

Firstpage

1631

Lastpage

1638

Keywords

Acceleration; Breakdown voltage; Costs; Degradation; Failure analysis; Microelectronics; Random access memory; Rivers; Stress; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on

Print_ISBN

0-7803-3369-1

Type

conf

DOI

10.1109/ESREF.1996.888179

Filename

888179