DocumentCode
2684526
Title
8 GHz Low Noise Bias Tuned VCO
Author
Znojkiewicz, M.E.
fYear
1984
fDate
May 30 1984-June 1 1984
Firstpage
489
Lastpage
491
Abstract
Design and performance of an 8 GHz cavity stabilized silicon bipolar transistor voltage controlled oscillator is presented. Very linear electronic frequency tuning with minimal output power variations are achieved without voractor by means of the transistor bias control. The VCO is mechanically tuned over 1 GHz frequency range with dialectic tuner. It delivers 50 mW of output power with 17% transistor efficiency and phase noise of -60 dBc/Hz at 1 kHz from carrier.
Keywords
Bipolar transistors; Circuit stability; Frequency; Packaging; Power generation; Reflection; Tuners; Tuning; Voltage control; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1984 IEEE MTT-S International
Conference_Location
San Francisco, CA, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1984.1131836
Filename
1131836
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