Title :
8 GHz Low Noise Bias Tuned VCO
Author :
Znojkiewicz, M.E.
fDate :
May 30 1984-June 1 1984
Abstract :
Design and performance of an 8 GHz cavity stabilized silicon bipolar transistor voltage controlled oscillator is presented. Very linear electronic frequency tuning with minimal output power variations are achieved without voractor by means of the transistor bias control. The VCO is mechanically tuned over 1 GHz frequency range with dialectic tuner. It delivers 50 mW of output power with 17% transistor efficiency and phase noise of -60 dBc/Hz at 1 kHz from carrier.
Keywords :
Bipolar transistors; Circuit stability; Frequency; Packaging; Power generation; Reflection; Tuners; Tuning; Voltage control; Voltage-controlled oscillators;
Conference_Titel :
Microwave Symposium Digest, 1984 IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/MWSYM.1984.1131836
