DocumentCode :
2684550
Title :
Enhancement of tbd of MOS gate oxides with a single-step pre-stress prior to a CVS in the fowler-nordheim regime
Author :
Martin, A. ; Ribbock, T. ; Sullivan, P.O. ; Mathewson, A.
Author_Institution :
National Microelectronics Research Centre
fYear :
1996
fDate :
1996
Firstpage :
1647
Lastpage :
1650
Keywords :
Degradation; Electric breakdown; Electronic mail; Manufacturing industries; Microelectronics; Semiconductor device testing; Silicon; Thermal stresses; Timing; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on
Print_ISBN :
0-7803-3369-1
Type :
conf
DOI :
10.1109/ESREF.1996.888182
Filename :
888182
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2684550
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