DocumentCode
2684617
Title
Hot-carrier reliability of n- and p- channel MOSFETS with polysilicon and CVD tungsten-polycide gate
Author
Lou, C.L. ; Chim, W.K. ; Chan, D.S.H. ; Pan, Y.
Author_Institution
National University of Singapore
fYear
1996
fDate
1996
Firstpage
1663
Lastpage
1666
Keywords
Degradation; Electron traps; Failure analysis; Hot carriers; Integrated circuit reliability; MOSFET circuits; Semiconductor device reliability; Silicides; Stress; Tungsten;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on
Print_ISBN
0-7803-3369-1
Type
conf
DOI
10.1109/ESREF.1996.888186
Filename
888186
Link To Document