DocumentCode :
2684617
Title :
Hot-carrier reliability of n- and p- channel MOSFETS with polysilicon and CVD tungsten-polycide gate
Author :
Lou, C.L. ; Chim, W.K. ; Chan, D.S.H. ; Pan, Y.
Author_Institution :
National University of Singapore
fYear :
1996
fDate :
1996
Firstpage :
1663
Lastpage :
1666
Keywords :
Degradation; Electron traps; Failure analysis; Hot carriers; Integrated circuit reliability; MOSFET circuits; Semiconductor device reliability; Silicides; Stress; Tungsten;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on
Print_ISBN :
0-7803-3369-1
Type :
conf
DOI :
10.1109/ESREF.1996.888186
Filename :
888186
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2684617
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