DocumentCode
2684632
Title
Comprehensive physical modeling of NMOSFET hot-carrier-induced degradation
Author
Lunenborg, M.M. ; de Graaff, H.C. ; Mouthaan, A.J. ; Verweij, J.F.
Author_Institution
University of Twente
fYear
1996
fDate
1996
Firstpage
1667
Lastpage
1670
Keywords
CMOS technology; Charge pumps; Circuit simulation; Degradation; Hot carriers; Interface states; MOSFET circuits; Predictive models; Semiconductor device modeling; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on
Print_ISBN
0-7803-3369-1
Type
conf
DOI
10.1109/ESREF.1996.888187
Filename
888187
Link To Document