• DocumentCode
    2684667
  • Title

    The impact of oxide degradation on the low frequency (I/F) noise behaviour of P channel MOSFETS

  • Author

    Hurley, Paul K. ; Sheehan, Eoin ; Moran, Stephen ; Mathewson, Alan

  • Author_Institution
    National Microelectronics Research Centre, Lee Maltings
  • fYear
    1996
  • fDate
    1996
  • Firstpage
    1679
  • Lastpage
    1682
  • Keywords
    CMOS process; Current measurement; Degradation; Frequency; Geometry; Hot carriers; Low-frequency noise; MOSFETs; Noise measurement; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on
  • Print_ISBN
    0-7803-3369-1
  • Type

    conf

  • DOI
    10.1109/ESREF.1996.888191
  • Filename
    888191
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2684667