Title :
The impact of oxide degradation on the low frequency (I/F) noise behaviour of P channel MOSFETS
Author :
Hurley, Paul K. ; Sheehan, Eoin ; Moran, Stephen ; Mathewson, Alan
Author_Institution :
National Microelectronics Research Centre, Lee Maltings
Keywords :
CMOS process; Current measurement; Degradation; Frequency; Geometry; Hot carriers; Low-frequency noise; MOSFETs; Noise measurement; Stress;
Conference_Titel :
Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on
Print_ISBN :
0-7803-3369-1
DOI :
10.1109/ESREF.1996.888191
