• DocumentCode
    2684873
  • Title

    Efficient output ESD protection for 0.5-μm high-speed CMOS SRAM IC with well-coupled technique

  • Author

    Ker, Ming-Dou ; Wu, Chau-Neng

  • Author_Institution
    Industrial Technology Research Institute
  • fYear
    1996
  • fDate
    1996
  • Firstpage
    1731
  • Lastpage
    1734
  • Keywords
    CMOS integrated circuits; CMOS technology; Electrostatic discharge; High speed integrated circuits; MOS devices; Protection; Random access memory; Resistors; Stress; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on
  • Print_ISBN
    0-7803-3369-1
  • Type

    conf

  • DOI
    10.1109/ESREF.1996.888203
  • Filename
    888203
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2684873