DocumentCode
2684888
Title
Nano-patterning by laser interference lithography
Author
Xie, Q. ; Hong, M.H. ; Van, L.H. ; Chong, T.C.
Author_Institution
Laser Microprocessing Lab., Data Storage Inst., Singapore, Singapore
Volume
2
fYear
2003
fDate
15-19 Dec. 2003
Abstract
In this paper, argon ion laser of 514.5 nm, is used for interference lithography. Two mutually coherent laser beams intersect at the surface of a coated substrate, creating a sinusoidal intensity profile. This is then transferred into the holographic film, creating a line and space pattern with spatial period, Λ = λ/2sinθ, where θ = 40 ° thus, Λ = 400 nm.
Keywords
holography; ion lasers; light interference; nanolithography; photolithography; 514.5 nm; Ar; argon ion laser; holographic film; laser interference lithography; nano-patterning; Buildings; Data engineering; Holography; Interference; Laboratories; Laser beams; Lithography; Memory; Physics; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN
0-7803-7766-4
Type
conf
DOI
10.1109/CLEOPR.2003.1277242
Filename
1277242
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