Title :
Turn-on speed of grounded gate NMOS ESD protection transistors
Author :
Meneghesso, G. ; Luchies, J.R.M. ; Kuper, F.G. ; Mouthhaan, A.J.
Author_Institution :
University of Twente
Keywords :
Electrostatic discharge; Hazards; MOS devices; MOSFETs; Protection; Pulse circuits; SPICE; Semiconductor device modeling; Time measurement; Voltage;
Conference_Titel :
Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on
Print_ISBN :
0-7803-3369-1
DOI :
10.1109/ESREF.1996.888204
