DocumentCode :
2684922
Title :
Risetime effects of HBM and square pulses on the failure thresholds of GGNMOS transistors
Author :
Musshoff, C. ; Wolf, H. ; Giesew, H. ; Eggew, P. ; Guggenmos, X.
Author_Institution :
Technical University of Munich
fYear :
1996
fDate :
1996
Firstpage :
1743
Lastpage :
1746
Keywords :
Biological system modeling; Capacitance; Circuit testing; Electrostatic discharge; Fingers; Humans; Integrated circuit modeling; Integrated circuit testing; Stress; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on
Print_ISBN :
0-7803-3369-1
Type :
conf
DOI :
10.1109/ESREF.1996.888206
Filename :
888206
Link To Document :
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