Title :
A Single-Resonator GaAs FET Oscillator with Noise Degeneration
Author :
Bianchini, M.J. ; Cole, J.B. ; DiBiase, R. ; Galani, Z. ; Laton, R.W., Jr. ; Wateman, R.C.
fDate :
May 30 1984-June 1 1984
Abstract :
A low noise GaAs FET oscillator circuit is presented. It uses a single dielectric resonator both in the oscillator feedback circuit and as the dispersive element of a discriminator in a frequency locked loop used for noise degeneration. An FM noise level of -120 dBc/Hz at 10 kHz offset was measured at X-band.
Keywords :
Circuit noise; Dielectric measurements; Dispersion; FETs; Feedback circuits; Frequency locked loops; Gallium arsenide; Noise level; Noise measurement; Oscillators;
Conference_Titel :
Microwave Symposium Digest, 1984 IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/MWSYM.1984.1131878
