DocumentCode :
2685290
Title :
A new wafer level reliability method for evaluation of ionic induced PMOSFET drift effects
Author :
Dreizner, A. ; Nagel, J. ; Schafe, R.
Author_Institution :
ITT Intermetall
fYear :
1996
fDate :
1996
Firstpage :
1855
Lastpage :
1858
Keywords :
Capacitance measurement; Capacitance-voltage characteristics; Contamination; Degradation; Dielectrics; MOSFET circuits; Pollution measurement; Stress measurement; Temperature; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on
Print_ISBN :
0-7803-3369-1
Type :
conf
DOI :
10.1109/ESREF.1996.888231
Filename :
888231
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2685290
بازگشت