DocumentCode
2685290
Title
A new wafer level reliability method for evaluation of ionic induced PMOSFET drift effects
Author
Dreizner, A. ; Nagel, J. ; Schafe, R.
Author_Institution
ITT Intermetall
fYear
1996
fDate
1996
Firstpage
1855
Lastpage
1858
Keywords
Capacitance measurement; Capacitance-voltage characteristics; Contamination; Degradation; Dielectrics; MOSFET circuits; Pollution measurement; Stress measurement; Temperature; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on
Print_ISBN
0-7803-3369-1
Type
conf
DOI
10.1109/ESREF.1996.888231
Filename
888231
Link To Document