DocumentCode
2685429
Title
Drain current DLTS analysis of recoverable and permanent degradation effects in AlGaAs/GaAs and AlGaAs/InGaAs HEMT´S
Author
Meneghesso, G. ; Haddab, Y. ; Perrino, N. ; Canali, C. ; Zanoni, E.
Author_Institution
University of Padova
fYear
1996
fDate
1996
Firstpage
1895
Lastpage
1898
Keywords
Buffer layers; Current measurement; Degradation; Electrons; Gallium arsenide; HEMTs; Impact ionization; Superlattices; Temperature distribution; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on
Print_ISBN
0-7803-3369-1
Type
conf
DOI
10.1109/ESREF.1996.888240
Filename
888240
Link To Document