Title :
F2 laser processing of silicone
Author :
Okoshi, Masayuki ; Takao, Hiromitsu ; Inoue, Narumi
Author_Institution :
Dept. of Electr. & Electron. Eng., Nat. Defense Acad., Yokosuka, Japan
Abstract :
We photochemically modified silicones for fabrication of SiO2 by a 157-nm F2 laser irradiation. Humps of SiO2 at a height of several microns could be fabricated on silicone rubber. Micro-patterning of silicons films was also fabricated by immersing the modified films in hydrogen fluoride solution. The photochemical modifications did not take place when a 193-nm ArF laser was used.
Keywords :
argon compounds; excimer lasers; fluorine; insulating thin films; laser ablation; laser materials processing; photochemistry; silicone rubber; 157 nm; 193 nm; ArF; ArF laser; F2; F2 laser processing; SiO2; hydrogen fluoride solution; micro-patterning; photochemically modified silicones; silicone rubber; Hydrogen; Optical device fabrication; Photochemistry; Rubber; Semiconductor films; Silicon;
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN :
0-7803-7766-4
DOI :
10.1109/CLEOPR.2003.1277279
