• DocumentCode
    2685444
  • Title

    F2 laser processing of silicone

  • Author

    Okoshi, Masayuki ; Takao, Hiromitsu ; Inoue, Narumi

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Nat. Defense Acad., Yokosuka, Japan
  • Volume
    2
  • fYear
    2003
  • fDate
    15-19 Dec. 2003
  • Abstract
    We photochemically modified silicones for fabrication of SiO2 by a 157-nm F2 laser irradiation. Humps of SiO2 at a height of several microns could be fabricated on silicone rubber. Micro-patterning of silicons films was also fabricated by immersing the modified films in hydrogen fluoride solution. The photochemical modifications did not take place when a 193-nm ArF laser was used.
  • Keywords
    argon compounds; excimer lasers; fluorine; insulating thin films; laser ablation; laser materials processing; photochemistry; silicone rubber; 157 nm; 193 nm; ArF; ArF laser; F2; F2 laser processing; SiO2; hydrogen fluoride solution; micro-patterning; photochemically modified silicones; silicone rubber; Hydrogen; Optical device fabrication; Photochemistry; Rubber; Semiconductor films; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
  • Print_ISBN
    0-7803-7766-4
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2003.1277279
  • Filename
    1277279
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2685444