Title :
High-power, high-efficiency power amplifier reference design in III-V wide bandgap gallium nitride technology using nonlinear vector network analyzer and X-parameters
Author :
Nielsen, Troels S. ; Madsen, Ulrik R. ; Dieudonné, Michael
Author_Institution :
Meas. Res. Labs., Agilent Technol., Rotselaar, Belgium
Abstract :
This paper presents a complete power amplifier design using new Nonlinear Vector Network Analyzer (NVNA) and X-parameter technologies. A high-power, pulsed Continuous Wave (CW) NVNA setup is presented and harmonic tuning capabilities of the measured X-parameter model is demonstrated using the same setup. From fundamental and harmonic impedance tuning, input and output power amplifier matching networks are synthesized and first-pass design success is confirmed by measurements of the fabricated power amplifier.
Keywords :
III-V semiconductors; gallium compounds; microwave power amplifiers; network analysers; wide band gap semiconductors; GaN; III-V wide bandgap gallium nitride technology; NVNA; X-parameter technology; first-pass design; fundamental impedance tuning; harmonic impedance tuning; harmonic tuning; high-power high-efficiency power amplifier reference design; high-power pulsed continuous wave NVNA; nonlinear vector network analyzer; power amplifier matching networks; Calibration; Harmonic analysis; Load modeling; Power amplifiers; Power harmonic filters; Power measurement; Tuners; Nonlinear vector network analyzer; X-parameters; behavioral modeling; gallium nitride; high efficiency; high power; power amplifier design;
Conference_Titel :
Microwaves, Communications, Antennas and Electronics Systems (COMCAS), 2011 IEEE International Conference on
Conference_Location :
Tel Aviv
Print_ISBN :
978-1-4577-1692-8
DOI :
10.1109/COMCAS.2011.6105850
